AOD528 30v n-channel alphamos general description product summary v ds i d (at v gs =10v) 50a r ds(on) (at v gs =10v) < 5.4m w r ds(on) (at v gs = 4.5v) < 9.5m w application 100% uis tested 100% r g tested symbol v ds v gs v 20 gate-source voltage drain-source voltage 30 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v ? latest trench power mosfet technology ? very low rds(on) at 4.5vgs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing ? isolated dc/dc converters in telecom and industri al g d s to252 dpak topview bottom view g g d d s s d v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc 100ns 36 v maximum junction-to-ambient a c/w r q ja 16 41 20 units junction and storage temperature range -55 to 175 c thermal characteristics parameter typ v 20 gate-source voltage max t a =70c i d 50 39 t c =25c t c =100c 163 pulsed drain current c continuous drain current g mj avalanche current c 13 continuous drain current 31 17 a 25 avalanche energy l=0.1mh c a t a =25c i dsm a w power dissipation a p dsm w t a =70c 50 1.6 t a =25c t c =25c 2.5 25 t c =100c power dissipation b p d maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.5 50 3 g d s to252 dpak topview bottom view g g d d s s d rev 0: dec 2012 www.aosmd.com page 1 of 6
AOD528 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.6 2 2.4 v 4.3 5.4 t j =125c 5.4 6.8 7.5 9.5 m w g fs 91 s v sd 0.7 1 v i s 46 a c iss 1187 1400 pf c oss 483 600 pf c rss 60 100 pf r g 0.7 1.5 2.3 w q g (10v) 18 nc q g (4.5v) 8.8 nc q gs 4.1 nc q gd 3.6 nc t d(on) 7.3 ns t r 10.5 ns t 21.8 ns reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs i d =250 m a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r =3 w turn-on delaytime gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge gate source charge gate drain charge total gate charge switching parameters v gs =10v, v ds =15v, i d =20a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v v ds =0v, v gs = 20v maximum body-diode continuous current g input capacitance output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a dynamic parameters v gs =4.5v, i d =20a r ds(on) static drain-source on-resistance diode forward voltage m w v gs =10v, i d =20a gate-body leakage current t d(off) 21.8 ns t f 5 ns t rr 14.7 ns q rr 24 nc out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off delaytime r gen =3 w turn-off fall time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =175 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: dec 2012 www.aosmd.com page 2 of 6
AOD528 typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4v 7v 10v 5v 4.5v 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 3 6 9 12 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4v 7v 10v 5v 4.5v rev 0: dec 2012 www.aosmd.com page 3 of 6
AOD528 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s r q jc =3 c/w 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =3 c/w 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss rev 0: dec 2012 www.aosmd.com page 4 of 6
AOD528 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) t a =25 c single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) t a =25 c r q ja =64 c/w 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =50 c/w rev 0: dec 2012 www.aosmd.com page 5 of 6
AOD528 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms 2 e = 1/2 li - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: dec 2012 www.aosmd.com page 6 of 6
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